(PR) Intel showcases 3D stacked CMOS transitor with backside power and direct backside contact

Intel Demonstrates Breakthroughs in Next-Generation Transistor Scaling for Future Nodes At IEDM 2023, Intel showcases 3D stacked CMOS transistors combined with backside power and direct backside contact – first-of-a-kind advancements that will extend Moore’s Law. What’s New: Today, Intel unveiled technical breakthroughs that maintain a rich pipeline of innovations for the company’s future process roadmap, underscoring the continuation and evolution of Moore’s Law. At the 2023 IEEE International Electron Devices Meeting (IEDM), Intel researchers showcased advancements in 3D stacked CMOS (complementary metal oxide semiconductor) transistors combined with backside power and direct backside contacts. The company also reported on scaling paths…

Keep on reading: (PR) Intel showcases 3D stacked CMOS transitor with backside power and direct backside contact Intel Demonstrates Breakthroughs in Next-Generation Transistor Scaling for Future Nodes At IEDM 2023, Intel showcases 3D stacked CMOS transistors combined with backside power and direct backside contact – first-of-a-kind advancements that will extend Moore’s Law. What’s New: Today, Intel unveiled technical breakthroughs that maintain a rich pipeline of innovations for the company’s future process roadmap, underscoring the continuation and evolution of Moore’s Law. At the 2023 IEEE International Electron Devices Meeting (IEDM), Intel researchers showcased advancements in 3D stacked CMOS (complementary metal oxide semiconductor) transistors combined with backside power and direct backside contacts. The company also reported on scaling paths…Keep on reading: (PR) Intel showcases 3D stacked CMOS transitor with backside power and direct backside contact Read More VideoCardz.com